advanced power n-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss 25v simple drive requirement r ds(on) 9m fast switching characteristic i d 57a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3 /w rthj-a 62.5 /w data & specifications subject to change without not ice ap73t02gh-hf 50 halogen-free product 160 parameter rating drain-source voltage 25 total power dissipation gate-source voltage + 20 drain current, v gs @ 10v 57 drain current, v gs @ 10v 40 pulsed drain current 1 thermal data parameter maximum thermal resistance, junction-ambient (pcb m ount) 3 201501293 1 storage temperature range operating junction temperature range -55 to 175 -55 to 175 g d s to-252(h) g d s ap73t02 series are from advanced power innovated design and silicon process technology to achieve the lowest possible o n- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the to-252 package is widely preferred for all commercial-i ndustrial surface mount applications using infrared reflow techniqu e and suited for high current application due to the low connectio n resistance.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 25 - - v v gs =10v, i d =30a - - 9 m v gs =4.5v, i d =20a - - 16 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 40 - s i dss drain-source leakage current v ds =25v, v gs =0v - - 10 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =15a - 14 22 nc q gs gate-source charge v ds =20v - 2.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9.5 - nc t d(on) turn-on delay time v ds =15v - 9 - ns t r rise time i d =30a - 85 - ns t d(off) turn-off delay time r g =3.3 ,v gs =10v - 20.5 - ns t f fall time r d =0.5 - 12.5 - ns c iss input capacitance v gs =0v - 710 1130 pf c oss output capacitance v ds =25v - 300 - pf c rss reverse transfer capacitance f=1.0mhz - 220 - pf r g gate resistance f=1.0mhz - 1.9 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.2 v t rr reverse recovery time i s =10a, v gs =0 v , - 25 - ns q rr reverse recovery charge di/dt=100a/s - 15 - nc notes: 1.pulse width limited by max. junction temperature 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. ap73t02gh-hf r ds(on) static drain-source on-resistance 2 2 3.surface mounted on 1 in 2 copper pad of fr4 board
ap73t02gh-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 20 40 60 80 100 0 2 4 6 8 v ds , drain-to-source voltage (v) i d , drain current (a) t c =175 o c 10v 7.0v 6.0v 5.0v v g =4.0v 0 40 80 120 160 0 2 4 6 8 10 12 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 10 20 30 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =175 o c 4 6 8 10 12 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d =20a t c =25 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 200 t j , junction temperature ( o c) normalized v gs(th)
ap73t02gh-hf fig 7. gate charge characteristics fig 8. typical capacitance characterist ics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 1 10 100 1000 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0 2 4 6 8 10 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =15a v ds =12v v ds =15v v ds =20v 0 200 400 600 800 1000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss q v g 4.5v q gs q gd q g charge t d(on) t r t d(off) t f v ds v gs 10% 90% operation in this area limited by r ds(on)
marking information 5 ap73t02gh-hf part number package code date code (ywwsss) y last digit of the year ww week sss sequence 73t02gh ywwsss meet rohs requirement for low voltage mosfet only
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